基于靜電場(chǎng)仿真分析的絕緣套管優(yōu)化設(shè)計(jì)
楊鎮(zhèn)寧1，王廷華1，李春艷2，白維正1，李俊豪1
（1 許昌許繼德理施爾電氣有限公司，河南 許昌 461000；2 大盛微電科技股份有限公司，河南 許昌 461000）
摘 要：為設(shè)計(jì)適用于40.5 kV中壓柜式氣體絕緣金屬封閉開(kāi)關(guān)設(shè)備(C-GIS) 的插入式套管，運(yùn)用靜電場(chǎng)理論建立C-GIS 套管電場(chǎng)的數(shù)學(xué)計(jì)算模型，通過(guò)ANSYS 軟件對(duì)套管在懸浮和接地不同狀態(tài)下仿真了套管的電場(chǎng)分布，并根據(jù)研究結(jié)果對(duì)內(nèi)部結(jié)構(gòu)進(jìn)行了優(yōu)化。結(jié)果表明：內(nèi)屏蔽接地情況下放電幾率更低，屏蔽罩距離中間導(dǎo)電銅棒距離為15 mm，屏蔽罩折邊半徑為1.5 mm時(shí)，環(huán)氧樹(shù)脂外表面沿面場(chǎng)強(qiáng)降低了約31%，環(huán)氧樹(shù)脂內(nèi)部最大場(chǎng)強(qiáng)為18.8 kV/mm，絕緣性能得到了明顯提升。
關(guān)鍵詞：插入式套管；ANSYS 軟件；電場(chǎng)分析；結(jié)構(gòu)優(yōu)化
中圖分類號(hào)：TM216+.5 文獻(xiàn)標(biāo)識(shí)碼：A 文章編號(hào)：1007-3175(2017)08-0031-04
Insulating Bushing Optimization Design Based on Electrostatic Field Simulation Analysis
YANG Zhen-ning1, WANG Ting-hua1, LI Chun-yan2, BAI Wei-zheng1, LI Jun-hao1
（1 XJ-Driescher Wegberg Electric Co., Ltd, Xuchang 461000, China; 2 Dasheng Microgrid Technology Co., Ltd, Xuchang 461000, China）
Abstract: To design the plug-in bushing suitable for 40.5 kV medium-voltage cabinet-type gas insulation switchgear (C-GIS), this paper used the electrostatic field theory to establish the mathematical calculation model of C-GIS bushing electric field and used the software ANSYS to simulate the bushing electric field distribution under conditions of suspension and grounding. The internal structure was optimized according to the research results. The results show that the probability of discharge is lower in the case of internal shields. The distance from the middle conductive copper rod to the shield is 15 mm. When the shield cover radius is 1.5 mm, the outer surface of epoxy resin is reduced by about 31% along the surface field strength and the maximum field strength inside epoxy resin is 18.8 kV/mm, so that the insulation performance is significantly improved.
Key words: plug-in bushing; ANSYS software; electric field analysis; structure optimization
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